Phase-change memory

New material for PRAM with thermal stability

Summary

A phase-change material, which has a high crystallization temperature and is superior in thermal stability of the amorphous phase, which has a composition of the general chemical formula GexMyTe100-x-y wherein M indicates one type of element which is selected from the group which comprises Al, Si, Cu, In, and Sn, x is 5.0 to 50.0 (at %) and y is 4.0 to 45.0 (at %) in range, and x and y are selected so that 40 (at %)≦x+y≦60 (at %).
This phase-change material further contains, as an additional element L, at least one type of element L which is selected from the group which comprises N, O, Al, Si, P, Cu, In, and Sn in the form of Ge_{xMyLzTe100-x-y-z} wherein z is selected so that 40 (at %)≦x+y+z≦60 (at %).

Characteristics

Effect/Application

Phase-change memory

IP Data

IP No.　 ： 8,598,563（US）、1333751（KR）、201080040813.3（CN）、5403565（JP）
Inventor ： SUTO Yuji 、KOIKE Junichi 、et al.
keyword ： Material