TOP > Technologies > T16-036

Technologies

Tohoku Univ. Technology
Admin No.T16-036

High-Efficiency MnSi based thermoelectric material

Highly efficient MnSi baset material

Overview

 Conventional manganese-silicide-based thermoelectric material MnSix has excellent thermoelectric property and thermal shock resistance. For example, the output factor S2σ (where S is the Seebeck coefficient and σ is the electrical conductivity), which is one of the thermoelectric property, is maximum 2.22 mW/K2m at 500C.
 However, MnSi (manganese monosilicide) is deposited in the layers in MnSix c-axis direction with a period of several tens microns, which causes a decrease of the figure of merit Z (output factor S2σ divided by thermal conductivity κ) of the material.
 This invention limits the MnSi layer deposition and provides a thermoelectric material with an excellent thermoelectric property and its manufacturing method.

High-Efficiency MnSi based thermoelectric material

Restrain layer deposition

High-Efficiency MnSi based thermoelectric material

Performance comparable to BeTe based material

High-Efficiency MnSi based thermoelectric material

Related Works

[1] NEDO, Realization of approximately twice the output factor compared to conventional one by using manganese-silicide-based thermoelectric conversion material, 1st Dec.2016,

IP Data

IP No.  : JP2017-074104
Inventor : MIYAZAKI Yuzuru, HAYASHI Kei, YUBATA Kunio, HAMADA Haruki, SATO Mika
keyword : Environment, Energy, Material







Back Technologies List

ページトップへ