Piezoelectric thin film & Piezoelectric device

MgHfAlN film, World’s Highest FoM

Overview

　Lead zirconate titanate (PZT) has been widely used as a piezoelectric material in sensors, actuators, and related applications. However, the presence of toxic Pb (lead) in PZT necessitates the search for safer alternatives.
　This innovative solution introduces a MgHf co-doped AlN thin film that exhibits exceptional piezoelectric properties.
　The MgHfAlN film is not only lead-free but also achieves groundbreaking performance, boasting the world's highest figure of merit (FoM) exceeding 45 GPa. Additionally, its piezoelectric strain constant (d33) exceeds 23 pm/V, and it delivers an impressive output power of 40 mW within a compact device size of just 1cc. 　This technology holds significant potential for applications in vibration-powered generator, electric field sensors, force sensors, slip sensors, and more.

Features・Outstandings

Product Application

・Vibration-powered generator　
・Electric field sensors, force sensors, slip sensors, and more.

Expected partner

・User company, Fabricator, Manufacturer　
・Investor (VC, CVC)

IP Data

IP No.　 ： JP699424
Inventor ： KUWANO Hiroki, NGUYEN HOANG HUNG,LE VAN MINH, OGUCHI Hiroyuki
Joint Applicant ：Sendai Smart Machines Co., Ltd. keyword ： Piezoelectric、 World's highest、 Compact、 Vibration-powered generator、 Device、 Sensor