Method for producing Gallium oxide

Low-cost, low-temperature, and simple manufacturing processes

Overview

　γ-Gallium oxide (γ-Ga₂O₃) is one of the metastable structures of gallium oxide and has excellent catalytic properties. However, it was difficult to be synthesized. In the conventional method for producing γ-Ga₂O₃, gallium nitrate hydrate was dissolved in distilled water with urea and baked at 500ºC. However, this method required a facility for high-temperature treatment and had a problem of increasing production costs such as equipment costs.　
　The present invention makes it possible to provide a method for producing gallium oxide at a low temperature and a simple process, thereby reducing production costs.
　It is characterized in that a raw material solution containing liquid gallium and a reducing agent is irradiated with ultrasonic waves. Thus, particles of gallium can be refined, and particles having crystals of γ-Ga₂O₃ can be formed on the surface thereof. As a result, the baking process and the complicated separation and cleaning process are not required, the manufacturing cost is reduced, and γ-Ga₂O₃ can be produced by a simple process at a low temperature.

Features・Outstandings

Product Application

・Wide-gap semiconductor　
・Power device

IP Data

IP No.　 ： JPA2021-66636
Inventor ： HAYASHI Yamato, TAKANO Yuki, TAKIZAWA Hirotsugu
keyword ： γ-Gallium oxide,nanoparticle,Microwave process