Simple method to siliconize Mo/W

Silicide film can be formed with low cost simply by dipping the free-form base material into the bath.

Overview

Mo material is excellent in heat resistance. Since Mo material is easily oxidized at high temperature, it is indispensable to form MoSi₂ protective film to prevent it. As a conventional method, the pack cementation method is known. Although this method can stably form MoSi₂ films, it requires processing conditions of 1000 ℃ or more and 10 hours or more, leading to high costs. The present invention relates to a method of forming a MoSi₂/WSi₂ film (e.g., 30 μm) on the surface of a Mo/W material by simply immersing a base material in a bath (e.g., 800 ℃. for 15 min.). According to this method, the largest advantage is that there is no restriction on the shape that can be treated. The base material processed into a product shape can be subjected to silicification treatment. The Mo material having the present invention has been confirmed to exhibit excellent oxidation resistance (see right table), and is useful as a more convenient silicification method.

Anti-Oxidation Test

Product Application

・Heater using MoSi₂ or WSi₂　
・Resistors using MoSi₂ or WSi₂
・Coating services (processing business)

Related Works

[1] Surface & Coatings Technology, 2022, 448, 128938.

IP Data

IP No. ： PCT/JP2022/048247　
Inventor ： MIKI Takahiro、GAMUTAN Jonah Longaquit
keyword ： Silicides、Coating、Molybdenum、Tungsten、Anti-Oxidation