Single-crystal aluminum nitride seed crystal

Able to create AlN seed crystal at low temperature, easy temperature control and fast growth rate

Overview

　Deep ultraviolet light emitting device (DUV-LED) is fabricated from AlGaN-based nitride semiconductor. The substrate material for the AlGaN-based DUV-LED is required to have high lattice matching with AlGaN, wider band gap than AlGaN and high thermal conductivity. Aluminum nitride (AlN) is attracting attention since it satisfies those conditions.　
　The sublimation method is a conventional method for producing AlN single crystal, but the cost is high because of high temperature requirement, and temperature control is also difficult.
　Using this technology, single-crystal AlN seed crystal can be created at a relatively high speed under low-temperature and easy temperature control conditions.

Possible to create highly oriented single-crystal AlN seed crystal

Product Application

・AlN crystal as AlGaN-based nitride semiconductor substrate　
・In particular, the creation of seed crystal as a starting point for the growth of AlN on AlN substrate

Related Works

[1] AMEI Chiaki, TOKUCHI Yuki, ADACHI Masayoshi, OTSUKA Makoto, FUKUYAMA Hiroyuki, The Japan Institute of Metals and Materials 2022 Spring lecture conference, 77.

IP Data

IP No.　 ： JP2022-028039　　　
Inventor ： ADACHI Masayoshi, FUKUYAMA Hiroyuki, OTSUKA Makoto, TOKUCHI Yuki, AMEI Chiaki
keyword ： aluminumnitride, AIN, semiconductor