Room temperature wafer bonding

Silicon wafer bonding via polysilazane

Overview

　Recently, silicon wafers are required to be bonded to each other in the fields of semiconductors and MEMS devices. However, since the conventional wafer bonding technology requires bonding at a high temperature, thermal stress and warpage in the wafer makes the circuit failure.
　This is the simple wafer bonding technology which can be bonded to each other simply by overlapping and pressurizing the other silicon wafer via plasma treated polysilazane coating.
　This technology doesn't require the high-temperature bonding process, which is expected to increase the yield of semiconductor and MEMS devices.

Features・Outstandings

Product Application

・Room temperature Si wafer bonding
・SOI wafer

IP Data

IP No.　 ： Not Published
Inventor ： TAKEUCHI Kai, HIGURASHI Eiji
keyword ： bonding, Room temperature bonding, semiconductor, wafer, process, silicon, polysilazane